product summary part number bv dss r ds(on) i d IRHF7330SE 400v 1.2 w 3.0a features: n radiation hardened up to 1 x 10 5 rads (si) n single event burnout (seb) hardened n single event gate rupture (segr) hardened n gamma dot (flash x-ray) hardened n neutron tolerant n identical pre- and post-electrical test conditions n repetitive avalanche rating n dynamic dv/dt rating n simple drive requirements n ease of paralleling n hermetically sealed n electrically isolated absolute maximum ratings parameter IRHF7330SE units i d @ v gs = 12v, t c = 25c continuous drain current 3.0 i d @ v gs = 12v, t c = 100c continuous drain current 1.9 i dm pulsed drain current ? 12 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 140 mj i ar avalanche current ? 3.0 a e ar repetitive avalanche energy ? 2.5 mj dv/dt peak diode recovery dv/dt ? 6.7 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. (1.6mm) from case for 10 sec.) weight 0.98 (typical) g n-channel single event effect (see) rad hard pd - 91864 pre-irradiation 400volt, 1.2 w w w w w , see rad hard hexfet international rectifiers see rad hard technology hexfets demonstrate immunity to see failure. ad- ditionally, under identical pre- and post-irrradiation test conditions, international rectifiers rad hard hexfets retain identical electrical specifications up to 1 x 10 5 rads (si) total dose. no compensation in gate drive circuitry is required. these devices are also capable of surviving transient ionization pulses as high as 1 x 10 12 rads (si)/sec, and return to normal op- eration within a few microseconds. since the see pro- cess utilizes international rectifiers patented hexfet technology, the user can expect the highest quality and reliability in the industry. rad hard hexfet transistors also feature all of the well-established advantages of mosfets, such as voltage control, very fast switching, ease of paral- leling and temperature stability of the electrical pa- rameters. they are well-suited for applications such as switching power supplies, motor controls, invert- ers, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments. o c a repetitive avalanche and dv/dt rated IRHF7330SE hexfet ? transistor 2/26/99 www.irf.com 1
IRHF7330SE devices pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 400 v v gs = 0v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.50 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source 1.2 w v gs = 12v, i d = 1.9a on-state resistance v gs(th) gate threshold voltage 2.5 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 1.3 s ( )v ds > 15v, i ds = 1.9a ? i dss zero gate voltage drain current 50 v ds = 0.8 x max rating,v gs =0v 250 v ds = 0.8 x max rating v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 41 v gs = 12v, i d = 3.0a q gs gate-to-source charge 7.0 nc v ds = max rating x 0.5 q gd gate-to-drain (miller) charge 20 t d (on) turn-on delay time 35 v dd = 200v, i d = 3.0a, t r rise time 62 r g = 7.5 w t d (off) turn-off delay time 58 t f fall time 58 l d internal drain inductance 5.0 l s internal source inductance 15 c iss input capacitance 555 v gs = 0v, v ds = 25v c oss output capacitance 160 pf f = 1.0mhz c rss reverse transfer capacitance 60 na w ? nh ns measured from dr a i n l e a d , 6mm (0.25 in) from pac kage t o c e n t e r o f d i e. measured from source lead, 6mm (0.25 in) from pac kage to source bonding pad. modified mosfet symbol sho w - i n g t h e i n t e r nal inductances . m a source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 3.0 modified mosfet symbol sho w i n g t h e i n t e gr a l i sm pulse source current (body diode) ? 12 r eve r s e p - n j u n c t i o n r e c t i f i e r. v sd diode forward voltage 1.4 v t j = 25c, i s = 3.0a, v gs = 0v ? t rr reverse recovery time 516 ns t j = 25c, i f = 3.0a, di/dt 100a/ m s q rr reverse recovery charge 3.0 m cv dd 50v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a thermal resistance parameter min typ max units test conditions r thjc junction-to-case 5.0 r thja junction-to-ambient 175 typical socket mount c/w
IRHF7330SE devices www.irf.com 3 table 1. low dose rate ? ? IRHF7330SE parameter 100k rads (si) units test conditions ? min max bv dss drain-to-source breakdown voltage 400 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 na v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v i dss zero gate voltage drain current 50 a v ds =0.8 x max rating, v gs =0v r ds(on)1 static drain-to-source ? 1.2 w v gs = 12v, i d = 1.9a on-state resistance one v sd diode forward voltage ? 1.4vt c = 25c, i s = 3.0a,v gs = 0v table 2. high dose rate ? 10 11 rads (si)/sec 10 12 rads (si)/sec parameter min typ max min typ max units test conditions v dss drain-to-source voltage 320 320 v applied drain-to-source voltage during gamma-dot i pp 3 3 a peak radiation induced photo-current di/dt 15 3 a/sec rate of rise of photo-current l 1 27 133 h circuit inductance required to limit di/dt table 3. single event effects let (si) fluence range v ds bias v gs bias ion (mev/mg/cm 2 ) (ions/cm 2 ) (m) (v) (v) cu 28 3x 10 5 ~43 400 -5 radiation characteristics radiation performance of rad hard hexfets international rectifier radiation hardened hexfets are tested to verify their hardness capability. the hard- ness assurance program at international rectifier comprises 3 radiation environments. every manufacturing lot is tested in a low dose rate (total dose) environment per mll-std-750, test method 1019 condition a. international rectifier has imposed a standard gate condition of 12 volts per note 5 and a v ds bias condition equal to 80% of the de- vice rated voltage per note 6. post-irradiation limits of the devices irradiated to 1 x 10 5 rads (si) are pre- sented in table 1, column 1, IRHF7330SE. the val- ues in table 1 will be met for either of the two low dose rate test circuits that are used. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. it should be noted that at a radiation level of 1 x 10 5 rads (si) the only parameter limit change is v gsth minimum . high dose rate testing may be done on a special request basis using a dose rate up to 1 x 10 12 rads (si)/sec ( see table 2). international rectifier radiation hardened hexfets have been characterized in heavy ion single event effects (see) environments. single event effects characterization is shown in table 3.
IRHF7330SE devices pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics .001 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) ds d 5.0v 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 5 6 7 8 9 10 11 12 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 150 c j t = 25 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 3a 0.01 0.001 i , drain-to-source current ( a d
IRHF7330SE devices www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage pre-irradiation 0.1 1 10 100 0.0 0.4 0.8 1.2 1.6 2.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 0 200 400 600 800 1000 1200 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 8 16 24 32 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 3a v = 80v ds v = 200v ds v = 320v ds 0.1 1 10 100 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
IRHF7330SE devices pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 12v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRHF7330SE devices www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v pre-irradiation 12v 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.3a 1.9a 3.0a
IRHF7330SE devices pre-irradiation 8 www.irf.com ? repetitive rating; pulse width limited by maximum junction temperature. refer to current hexfet reliability report. ? @ starting t j = 25c, e as = [0.5 * l * (i l 2 ) ], v dd =50v peak i l = 3.0a, v gs =12 v, 25 r g 200w ? i sd 3.0a, di/dt 400a/ m s, v dd bv dss , t j 150c suggested rg = 7.5 w ? pulse width 300 m s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. v ds = 0.8 rated bv dss (pre-irradiation) applied and v gs = 0 during irradiation per mll-std -750, method 1019, condition a. ? this test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 mev), 30 nsec pulse. ? all pre-irradiation and post-irradiation test conditions are identical to facilitate direct comparison for circuit applications. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 2/99 case outline and dimensions to-205af (modified to-39) all dimensions are shown millimeters (inches)
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